JPS5728362A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5728362A
JPS5728362A JP10419780A JP10419780A JPS5728362A JP S5728362 A JPS5728362 A JP S5728362A JP 10419780 A JP10419780 A JP 10419780A JP 10419780 A JP10419780 A JP 10419780A JP S5728362 A JPS5728362 A JP S5728362A
Authority
JP
Japan
Prior art keywords
layer
region
type
diffused
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10419780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132665B2 (en]
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP10419780A priority Critical patent/JPS5728362A/ja
Publication of JPS5728362A publication Critical patent/JPS5728362A/ja
Publication of JPH0132665B2 publication Critical patent/JPH0132665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10419780A 1980-07-28 1980-07-28 Semiconductor device Granted JPS5728362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10419780A JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10419780A JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5728362A true JPS5728362A (en) 1982-02-16
JPH0132665B2 JPH0132665B2 (en]) 1989-07-10

Family

ID=14374245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10419780A Granted JPS5728362A (en) 1980-07-28 1980-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728362A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125132A (ja) * 1994-10-28 1996-05-17 Rohm Co Ltd 半導体装置
JP2006295073A (ja) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125132A (ja) * 1994-10-28 1996-05-17 Rohm Co Ltd 半導体装置
JP2006295073A (ja) * 2005-04-14 2006-10-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7986018B2 (en) 2006-10-23 2011-07-26 Sony Corporation Solid-state imaging device
US8969987B2 (en) 2006-10-23 2015-03-03 Sony Corporation Solid-state imaging device

Also Published As

Publication number Publication date
JPH0132665B2 (en]) 1989-07-10

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